Taiyo Nippon Sanso and its subsidiary Taiyo Nippon Sanso CSE were jointly developing the fast growth technology on β-type gallium oxide (β-Ga203) crystal by the metal organic chemical vapor deposition (MOVPE) with professor Yoshinao Kumagai and others of the Tokyo University of Agriculture and Engineering Postgraduate Course (Appllied Chemistry Div.). This time they have realized a further development of the fast growth by means of adopting tri-methyl gallium (TMG) as its raw material.

According to the announcement, based on the diagnose that a high vapor pressure could be suitable for fast growth, they newly used TMG in place of tri-ethyl gallium which had achieved a high-purity film at a growth speed of 1.4μm/h on 　

March 2021. With the new material of TMG, they attempted a change in the TMG supply amount at 34-550μmol/m under the conditions of 1,000℃ of growth temperature on wafers, inside-furnace pressure of 2.4 kPa and the partial pressure to supply oxygen at 570Pa. Controlling the carbon pollution, they succeeded to achieve a fast growth pressure at the maximum of 16.2μm/h which is equivalent to Halide Vapor Phase Epitaxy (HVPE).

In response to this accomplishment and based on the MOVPE Device “FR2000-OX” provided in Tokyo University of Agriculture and Engineering, TNSC is planning to develop a small-scale production type and then a large-scale mass- production equipment to start sales in 2025.