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Metal-organic (MO) has been used for MOCVD materials of composite semiconductors, but its application to the cutting-edge silicon semiconductor process has also come in sight.

In the meeting to report results of “The Core Technology Development of Green Nanoelectronics” held on March 13, utilization of Indium (In),Galium (Ga), and arsenic (Hs) of Ⅲ-V family was taken up as a major theme for the high-speed but low-power consuming device out of the R&D items on new material and structure CMOS technologies dealt with by the joint project of Tokyo University and AIST.

It is applied to the gate insulator of high-dielectric lanthanum oxide (La2O3) film and presents features of excellent heat resistance to enable hight-temperature treatments. In the practical process, InGaHs on a silicon substrate is epitaxial-grown for lamination with an ultra-fine film of 3.5 nanometers. The main specialty gases used are trimethyl indium (TMI), trimethygallium (TMG) and arsine (AsH3). Interesting to say, it uses the same material as a red color light-emitting-diode (LED). It shows that proven materials instead of new ones are intentionally used as a way to go.”