On October 27 Taiyo Nippon Sanso delivered research equipment, including an MOCVD device and a complete gas supply facility to the research laboratory of Professor Hiroshi Amano who won the Nobel Prize in physics in 2014.　Professor Amano is a global authority on gallium nitride (GaN) semiconductors.

GaN is a material for the next generation power semiconductor which it is hoped will contribute to energy conservation. On October 1, Nagoya University, along with Professor Amano, established a GaN research consortium which is a research center for nitride semiconductors. Government, academia, and industry are working together in this endeavor. A setup has been arranged to handle all areas ranging from the formation of crystals for GaN devices to the manufacture of these devices and their evaluation. Using the Taiyo Nippon Sanso MOCVD which was fostered with the development of the blue LED, it is anticipated that further research and development will be undertaken regarding GaN devices.
The MOCVD just delivered (type: SR8000) has a treatment capacity of up to three 4 inch units. Regarding its features, a spokesperson from Taiyo Nippon Sanso stated, “It is featured by a high growth rate and high purity to meet the requirements of thick film growth needed for the study of highly pressure resistant transistors and diodes on the bulk GaN substrate. In addition, a complete gas supply facility composed of a Hydride Vapor Phase Epitaxy (HVPE) facility for vapor growth with a treatment capacity of one 2 inch unit with the highest treatment temperature of 1,500℃, a high purity nitride gas purifier, a high purity hydrogen gas purifier, 4 cylinder cabinets, and a combustion type exhaust gas treatment facility. The company won this contract at the international bid, although the value of the order was not revealed. In 2001 Taiyo Nippon Sanso delivered a small MOCVD for use in research to the research laboratory of Professor Amano and in addition now supplies liquid nitrogen and ammonia.
]