New etching gas: PF3

Achieves high aspect ratio when mixed with hydrofluoric acid
Low-temperature processing (-60°C) developed by TEL

A new etching gas, phosphorus trifluoride (PF3), is creating new developments for next-generation semiconductor processing.

On June 9 last year, Tokyo Electron (TEL) announced that group company Tokyo Electron Miyagi had developed a memory channel hole etching technique that had achieved ultra-high speed 10-micron-deep etching for 3D-NAND flash memory devices with over 400 layers and an 84% reduction of the global warming potential.

Up to now, practical application of dielectric film etching at an ultra-low temperature of -60°C has not been achieved, but this new process spectacularly increases the speed of dielectric film etching. This enables processing either a 10-micron silicon dioxide or nitride laminated film in as little as about 33 minutes to achieve fast, high-aspect-ratio (HAR) etching (2.5 times faster than previous processes) while also reducing the global warming potential by 84%, gathering attention for this revolutionary technique.

(Full text is available in The Gas Review No.545)

15 Mar. 2024

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